These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalan.
TAB
Order codes
STF6N62K3 STFI6N62K3 STI6N62K3 STP6N62K3 STU6N62K3
VDSS RDS(on) max. ID 620 V < 1.2 Ω 5.5 A
PTOT
30 W 30 W 90 W 90 W 90 W
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitance
■ Improved diode reverse recovery
characteristics
■ Zener-protected
Applications
■ Switching applications
3 2 1
TO-220FP
TAB
3 2 1
TO-220
123
I²PAK
1 23
I²PAK FP
TAB
IPAK
3
2 1
Figure 1. Internal schematic diagram
D(2,TAB)
Description
These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ Super.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STU6N60M2 |
STMicroelectronics |
N-channel Power MOSFET | |
2 | STU6N65K3 |
STMicroelectronics |
N-channel Power MOSFET | |
3 | STU6N65M2 |
STMicroelectronics |
N-channel Power MOSFET | |
4 | STU6N95K5 |
STMicroelectronics |
N-channel Power MOSFET | |
5 | STU6NA100 |
STMicroelectronics |
N-channel Power MOSFET | |
6 | STU6NA90 |
STMicroelectronics |
N-channel Power MOSFET | |
7 | STU6NF10 |
STMicroelectronics |
N-channel Power MOSFET | |
8 | STU600S |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor | |
9 | STU6010 |
EIC discrete Semiconductors |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR | |
10 | STU601S |
SamHop Microelectronics |
P-Channel Logic Level Enhancement Mode Field Effect Transistor | |
11 | STU6025NL |
SamHop Microelectronics |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
12 | STU6025NLS |
SamHop Microelectronics |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |