Max220TM INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s CONSUMER AND INDUSTRIAL LIGHTING s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES (UPS) ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS ID ID I DM ( • ) P tot T stg Tj Parameter Drain-source Voltage (V GS = .
) ABSOLUTE MAXIMUM RATINGS
Symbol V DS VDGR V GS ID ID I DM (
• ) P tot T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature
o
Value 900 900 ± 30 5.8 3.7 23.2 145 1.16 -65 to 150 150
Unit V V V A A A W W/ o C
o o
C C
(
•) Pulse width limited by safe operating area
March 1996
1/5
STU6NA90
THERMAL DATA
R thj-case
Rthj-amb
R .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STU6NA100 |
STMicroelectronics |
N-channel Power MOSFET | |
2 | STU6N60M2 |
STMicroelectronics |
N-channel Power MOSFET | |
3 | STU6N62K3 |
STMicroelectronics |
N-channel Power MOSFET | |
4 | STU6N65K3 |
STMicroelectronics |
N-channel Power MOSFET | |
5 | STU6N65M2 |
STMicroelectronics |
N-channel Power MOSFET | |
6 | STU6N95K5 |
STMicroelectronics |
N-channel Power MOSFET | |
7 | STU6NF10 |
STMicroelectronics |
N-channel Power MOSFET | |
8 | STU600S |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor | |
9 | STU6010 |
EIC discrete Semiconductors |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR | |
10 | STU601S |
SamHop Microelectronics |
P-Channel Logic Level Enhancement Mode Field Effect Transistor | |
11 | STU6025NL |
SamHop Microelectronics |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
12 | STU6025NLS |
SamHop Microelectronics |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |