The device is manufactured in NPN planar technology by using a "base island" layout. the resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Table 1. Device summary Marking SA851 SA851 Package TO-92 TO-92AP Packaging Bulk Ammopack Order code STSA851 STSA851-AP March 2008 Rev 3 1/11 www.st.com 11 STSA8.
■ Very low collector to emitter saturation www.DataSheet4U.com
■ High current gain characteristic
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voltage
Fast-switching speed
Applications
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Emergency lighting Voltage regulators Relay drivers High efficiency low voltage switching applications Figure 1. Internal schematic diagram
TO-92 TO-92AP
Description
The device is manufactured in NPN planar technology by using a "base island" layout. the resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.
Table 1.
Device summary
Marking SA851 SA851 Package TO-92 TO-92AP Packaging Bulk Ammo.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STSA1805 |
STMicroelectronics |
LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |
2 | STS-2308-01 |
STAR ACOUSTICS |
DYNAMIC MICRO SPEAKER | |
3 | STS-8857 |
Silonex |
Transmissive Switch Assembly | |
4 | STS01DTP06 |
ST Microelectronics |
Dual NPN-PNP complementary Bipolar transistor | |
5 | STS05DTP03 |
ST Microelectronics |
Dual NPN-PNP complementary bipolar transistor | |
6 | STS100 |
Solid State Optronic |
Multifunction Telecommunications Switch | |
7 | STS10100S |
JILIN SINO |
TRENCH SCHOTTKY BARRIER DIODE | |
8 | STS10DN3LH5 |
ST Microelectronics |
Power MOSFETs | |
9 | STS10NF30L |
ST Microelectronics |
N-CHANNEL PowerMESH MOSFET | |
10 | STS10P3LLH6 |
STMicroelectronics |
P-channel Power MOSFET | |
11 | STS10P4LLF6 |
STMicroelectronics |
P-Channel Power MOSFET | |
12 | STS10PF30L |
STMicroelectronics |
P-CHANNEL POWER MOSFET |