R TRENCH SCHOTTKY BARRIER DIODE STS10100S MAIN CHARACTERISTICS Package IF(AV) VRRM TJmax IFSM VF(max) 10A 100V 150 ℃ 150A 0.62V (@Tj=125℃) 、 APPLICATIONS Low voltage, high frequency rectifier Free wheeling diodes, polarity protection applications SMP-1 , , (RoHS) FEATURES Low power loss, high efficiency High Operating Jun.
Low power loss, high efficiency
High Operating Junction
Temperature
Guard ring for overvoltage
protection,High reliability
RoHS product
DPAKM
ORDER MESSAGE
Order codes
-
-
Halogen-Reel
Halogen Free-Reel
STS10100S-XG-AR
STS10100S-XG-A
STS10100S-RM-AR
STS10100S-RM-A
Marking
STS10100S STS10100S
Package
SMP-1 DPAKM
(Rev.):201807B
1/6
R
TRENCH SCHOTTKY BARRIER DIODE
ABSOLUTE RATINGS (Tc=25℃)
Parameter
Symbol
Value
Unit
Repetitive peak reverse voltage
VRRM
100
V
Maximum DC blocking voltage
VDC
100
V
TC=100℃ Average Rectified Forward Current
IF(.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STS100 |
Solid State Optronic |
Multifunction Telecommunications Switch | |
2 | STS10DN3LH5 |
ST Microelectronics |
Power MOSFETs | |
3 | STS10NF30L |
ST Microelectronics |
N-CHANNEL PowerMESH MOSFET | |
4 | STS10P3LLH6 |
STMicroelectronics |
P-channel Power MOSFET | |
5 | STS10P4LLF6 |
STMicroelectronics |
P-Channel Power MOSFET | |
6 | STS10PF30L |
STMicroelectronics |
P-CHANNEL POWER MOSFET | |
7 | STS10T06 |
STANSON |
Low Vf Schottky Diode | |
8 | STS11NF30L |
ST Microelectronics |
N-CHANNEL PowerMESH MOSFET | |
9 | STS11NF3LL |
ST Microelectronics |
N-CHANNEL PowerMESH MOSFET | |
10 | STS123 |
AUK |
NPN Silicon Transistor | |
11 | STS126 |
SamHop Microelectronics |
N-Channel MOSFET | |
12 | STS12N3LLH5 |
STMicroelectronics |
N-channel MOSFET |