The STS01DTP06 is a Hybrid dual NPN-PNP complementary power bipolar transistor manufactured by using the latest low voltage planar techlogy. The STS01DTP06 is housed in dual island SO-8 package with separated terminals for higher assembly flexibility, specifically recommended to be used in Push-Pull or Totem Pole configuration as post IGBTs and MOSFETs drive.
VCE(sat) 0.35V
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hFE >100
IC 1A
High gain Low VCE(sat) Simplified circuit design Reduced component count SO-8
Applications
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Push-Pull or Totem-Pole configuration MOSFET and IGBT gate driving Motor, relay and solenoid driving
Internal schematic diagram
Description
The STS01DTP06 is a Hybrid dual NPN-PNP complementary power bipolar transistor manufactured by using the latest low voltage planar techlogy. The STS01DTP06 is housed in dual island SO-8 package with separated terminals for higher assembly flexibility, specifically recommended to be used in Push-Pull or Totem Pole con.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STS05DTP03 |
ST Microelectronics |
Dual NPN-PNP complementary bipolar transistor | |
2 | STS-2308-01 |
STAR ACOUSTICS |
DYNAMIC MICRO SPEAKER | |
3 | STS-8857 |
Silonex |
Transmissive Switch Assembly | |
4 | STS100 |
Solid State Optronic |
Multifunction Telecommunications Switch | |
5 | STS10100S |
JILIN SINO |
TRENCH SCHOTTKY BARRIER DIODE | |
6 | STS10DN3LH5 |
ST Microelectronics |
Power MOSFETs | |
7 | STS10NF30L |
ST Microelectronics |
N-CHANNEL PowerMESH MOSFET | |
8 | STS10P3LLH6 |
STMicroelectronics |
P-channel Power MOSFET | |
9 | STS10P4LLF6 |
STMicroelectronics |
P-Channel Power MOSFET | |
10 | STS10PF30L |
STMicroelectronics |
P-CHANNEL POWER MOSFET | |
11 | STS10T06 |
STANSON |
Low Vf Schottky Diode | |
12 | STS11NF30L |
ST Microelectronics |
N-CHANNEL PowerMESH MOSFET |