This application specific Power MOSFET is the second generation of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. Thi.
Type STS8DNF3LL
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VDSS 30V
RDS(on) <0.020Ω
ID 8A
Optimal RDS(on) x Qg trade-off @ 4.5V Conduction losses reduced Switching losses reduced
S0-8
Description
This application specific Power MOSFET is the second generation of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high effi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STS8DN3LLH5 |
STMicroelectronics |
Power MOSFETs | |
2 | STS8DN6LF6AG |
STMicroelectronics |
Automotive-grade dual N-channel Power MOSFET | |
3 | STS8DNH3LL |
ST Microelectronics |
Dual N-CHANNEL Power MOSFET | |
4 | STS8050 |
AUK |
NPN Silicon Transistor | |
5 | STS8201 |
SamHop Microelectronics |
Dual N-Channel E nhancement Mode Field Effect Transistor | |
6 | STS8202 |
SamHop Microelectronics |
Dual N-Channel MOSFET | |
7 | STS8205 |
SamHop Microelectronics |
Dual N-Channel E nhancement Mode Field Effect Transistor | |
8 | STS8207 |
SamHop Microelectronics |
Dual N-Channel MOSFET | |
9 | STS8208 |
SamHop Microelectronics |
Dual N-Channel E nhancement Mode Field Effect Transistor | |
10 | STS8212 |
SamHop |
Dual N-Channel Enhancement Mode Field Effect Transistor | |
11 | STS8213 |
SamHop |
Dual N-Channel Enhancement Mode Field Effect Transistor | |
12 | STS8215 |
SamHop Microelectronics |
Dual N-Channel MOSFET |