Green Product STS8213 Ver 1.0 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 16.0 @ VGS=4.0V 20V 7A 16.5 @ VGS=3.7V 18.0 @ VGS=3.1V 22.0 @ VGS=2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. TSOT 26.
Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. TSOT 26 Top View D1 D2 S1 D1/D2 S2 1 2 3 6 5 4 G1 D1/D2 G2 G1 G2 S1 S2 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit 20 ±12 TA=25°C TA=70°C TA=25°C TA=70°C 7 5.6 27 a Units V V A A A W W °C Maximum Power Dissipation 1.25 0.8 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance,.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STS8212 |
SamHop |
Dual N-Channel Enhancement Mode Field Effect Transistor | |
2 | STS8215 |
SamHop Microelectronics |
Dual N-Channel MOSFET | |
3 | STS8216 |
SamHop Microelectronics |
Dual N-Channel MOSFET | |
4 | STS8217 |
SamHop |
Dual N-Channel Enhancement Mode Field Effect Transistor | |
5 | STS8201 |
SamHop Microelectronics |
Dual N-Channel E nhancement Mode Field Effect Transistor | |
6 | STS8202 |
SamHop Microelectronics |
Dual N-Channel MOSFET | |
7 | STS8205 |
SamHop Microelectronics |
Dual N-Channel E nhancement Mode Field Effect Transistor | |
8 | STS8207 |
SamHop Microelectronics |
Dual N-Channel MOSFET | |
9 | STS8208 |
SamHop Microelectronics |
Dual N-Channel E nhancement Mode Field Effect Transistor | |
10 | STS8235 |
SamHop |
Dual N-Channel Enhancement Mode Field Effect Transistor | |
11 | STS8050 |
AUK |
NPN Silicon Transistor | |
12 | STS8550 |
AUK |
PNP Silicon Transistor |