• High current application • Radio in class B push-pull operation Feature • Complementary pair with STS8550 Ordering Information Type NO. STS8050 Marking STS8050 Package Code TO-92 Outline Dimensions 3.45±0.1 4.5±0.1 2.25±0.1 unit : mm 4.5±0.1 0.4±0.02 2.06±0.1 14.0±0.40 1.27 Typ. 2.54 Typ. 1 2 3 1.20±0.1 0.38 PIN Connections 1. Emitter 2. Base.
se-Emitter voltage Transition frequency Collector output capacitance
(Ta=25°C)
Symbol
BVCBO BVCEO ICBO h
* FE
Test Condition
IC=500µA, IE=0 IC=1mA, IB=0 VCB=15V, IE=0 VCE=1V, IC=50mA IC=500mA, IB=50mA VCE=1V, IC=500mA VCE=5V, IC=10mA VCB=10V, IE=0, f=1MHz
Min. Typ. Max.
30 25 85 120 19 50 300 0.5 1.2 -
Unit
V V nA V V MHz pF
VCE(sat) VBE fT Cob
* : hFE Rank
/ B : 85~160, C : 120~200, D : 160~300
KST-9012-000
2
STS8050
Electrical Characteristic Curves
Fig. 1 Pc - Ta Fig. 2 IC - VBE
Fig. 3 IC - VCE
Fig. 4 VCE(SAT) - IC
Fig. 5 hFE - IC
KST-9012-000
3
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STS8201 |
SamHop Microelectronics |
Dual N-Channel E nhancement Mode Field Effect Transistor | |
2 | STS8202 |
SamHop Microelectronics |
Dual N-Channel MOSFET | |
3 | STS8205 |
SamHop Microelectronics |
Dual N-Channel E nhancement Mode Field Effect Transistor | |
4 | STS8207 |
SamHop Microelectronics |
Dual N-Channel MOSFET | |
5 | STS8208 |
SamHop Microelectronics |
Dual N-Channel E nhancement Mode Field Effect Transistor | |
6 | STS8212 |
SamHop |
Dual N-Channel Enhancement Mode Field Effect Transistor | |
7 | STS8213 |
SamHop |
Dual N-Channel Enhancement Mode Field Effect Transistor | |
8 | STS8215 |
SamHop Microelectronics |
Dual N-Channel MOSFET | |
9 | STS8216 |
SamHop Microelectronics |
Dual N-Channel MOSFET | |
10 | STS8217 |
SamHop |
Dual N-Channel Enhancement Mode Field Effect Transistor | |
11 | STS8235 |
SamHop |
Dual N-Channel Enhancement Mode Field Effect Transistor | |
12 | STS8550 |
AUK |
PNP Silicon Transistor |