STS8207 - SamHop Microelectronics

STS8207 Dual N-Channel MOSFET

Gre r Pro STS8207 Ver 1.0 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 34 20V 4.5A 36 40 49 @ VGS=4.0V @ VGS=3.7V @ VGS=3.1V @ VGS=2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. TSOT 26 Top View .

Features

Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. TSOT 26 Top View D1 D2 S1 D1/D2 S2 1 2 3 6 5 4 G1 D1/D2 G2 G1 G2 S1 S2 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit 20 ±12 TA=25°C TA=70°C TA=25°C TA=70°C 4.5 3.6 18 a Units V V A A A W W °C Maximum Power Dissipation 1.25 0.8 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistanc.