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This device is a dual N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Product status link STS8DN6LF6AG Product summary Order code STS8DN6LF6AG Marking 8DN6LF6 Package SO-8 Packing Tape and reel DS11953 - Rev 2 - March 2021 For.
Order code
VDS
RDS(on) max.
ID
4 1
STS8DN6LF6AG
60 V
24 mΩ
8A
SO-8
D1(7, 8)
D2(5, 6)
• AEC-Q101 qualified
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss
• Logic level
G1(2)
G2(4)
Applications
• Switching applications
PTOT 3.2 W
S1(1)
S2(3)
SC12820
Description
This device is a dual N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Product status link STS8DN6LF6AG
Product summary
Order code
STS8DN6.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STS8DN3LLH5 |
STMicroelectronics |
Power MOSFETs |
|
| 2 | STS8DNF3LL |
ST Microelectronics |
Dual N-CHANNEL Power MOSFET |
|
| 3 | STS8DNH3LL |
ST Microelectronics |
Dual N-CHANNEL Power MOSFET |
|
| 4 | STS8050 |
AUK |
NPN Silicon Transistor |
|
| 5 | STS8201 |
SamHop Microelectronics |
Dual N-Channel E nhancement Mode Field Effect Transistor |
|
| 6 | STS8202 |
SamHop Microelectronics |
Dual N-Channel MOSFET |
|
| 7 | STS8205 |
SamHop Microelectronics |
Dual N-Channel E nhancement Mode Field Effect Transistor |
|
| 8 | STS8207 |
SamHop Microelectronics |
Dual N-Channel MOSFET |
|
| 9 | STS8208 |
SamHop Microelectronics |
Dual N-Channel E nhancement Mode Field Effect Transistor |
|
| 10 | STS8212 |
SamHop |
Dual N-Channel Enhancement Mode Field Effect Transistor |
|
| 11 | STS8213 |
SamHop |
Dual N-Channel Enhancement Mode Field Effect Transistor |
|
| 12 | STS8215 |
SamHop Microelectronics |
Dual N-Channel MOSFET |
|