STS8235 - SamHop

STS8235 Dual N-Channel Enhancement Mode Field Effect Transistor

STS8235 S a mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 30V F E AT UR E S S uper high dense cell design for low R DS (ON ). ID 4.5A R DS(ON) (m Ω) Max 36 @ VGS=4.5V 46 @ VGS=2.5V R ugged and reliable. S urface Mount P ackage. E S D P rotected. S OT26 Top View D1 D2 S1 D1/D2 S2 .

Features

herwise noted ) 4 Symbol Parameter Conditions VGS=0V , ID=250uA VDS=24V , VGS=0V Min 30 Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance VGS= ±10V , VDS=0V 1 ±10 0.5 0.7 30 36 15 440 80 56 10 12.5 15.5 30 6.7 4.6 1.5 2.2 1.25 0.78 1.2 1.5 36 46 uA uA V m ohm m ohm S pF pF pF ns ns ns ns nC nC nC nC A V VDS=VGS , ID=250uA VGS=4.5V , ID=4.5A VGS=2.5V , ID=4A VDS=5V , ID=4.5A Forward Transconductance.