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STS8235 |
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| Part Number | STS8235 |
| Manufacturer | SamHop |
| Description | STS8235 S a mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 30V F E AT UR E S S uper high dense cell design for low R DS (ON ). I... |
| Features |
herwise noted )
4 Symbol
Parameter
Conditions
VGS=0V , ID=250uA VDS=24V , VGS=0V
Min 30
Typ
Max
Units V
OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance
VGS= ±10V , VDS=0V
1 ±10 0.5 0.7 30 36 15 440 80 56 10 12.5 15.5 30 6.7 4.6 1.5 2.2 1.25 0.78 1.2 1.5 36 46
uA uA V m ohm m ohm S pF pF pF ns ns ns ns nC nC nC nC A V
VDS=VGS , ID=250uA VGS=4.5V , ID=4.5A VGS=2.5V , ID=4A VDS=5V , ID=4.5A
Forward Transconductance... |
| Document |
 STS8235 Data Sheet
PDF 167.16KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STS8201 |
SamHop Microelectronics |
Dual N-Channel E nhancement Mode Field Effect Transistor |
|
| 2 | STS8202 |
SamHop Microelectronics |
Dual N-Channel MOSFET |
|
| 3 | STS8205 |
SamHop Microelectronics |
Dual N-Channel E nhancement Mode Field Effect Transistor |
|
| 4 | STS8207 |
SamHop Microelectronics |
Dual N-Channel MOSFET |
|
| 5 | STS8208 |
SamHop Microelectronics |
Dual N-Channel E nhancement Mode Field Effect Transistor |
|