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STS8207 |
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| Part Number | STS8207 |
| Manufacturer | SamHop Microelectronics |
| Description | Gre r Pro STS8207 Ver 1.0 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 34 20V 4.5A 36 40 49 @ VGS=4.0V @ VGS=... |
| Features |
Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected.
TSOT 26 Top View
D1
D2
S1 D1/D2 S2
1 2 3
6 5 4
G1 D1/D2 G2
G1
G2
S1
S2
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b a
Limit 20 ±12 TA=25°C TA=70°C TA=25°C TA=70°C 4.5 3.6 18
a
Units V V A A A W W °C
Maximum Power Dissipation
1.25 0.8 -55 to 150
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA Thermal Resistanc... |
| Document |
 STS8207 Data Sheet
PDF 101.49KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STS8201 |
SamHop Microelectronics |
Dual N-Channel E nhancement Mode Field Effect Transistor |
|
| 2 | STS8202 |
SamHop Microelectronics |
Dual N-Channel MOSFET |
|
| 3 | STS8205 |
SamHop Microelectronics |
Dual N-Channel E nhancement Mode Field Effect Transistor |
|
| 4 | STS8208 |
SamHop Microelectronics |
Dual N-Channel E nhancement Mode Field Effect Transistor |
|
| 5 | STS8212 |
SamHop |
Dual N-Channel Enhancement Mode Field Effect Transistor |
|