STPSC8TH13TI - STMicroelectronics

STPSC8TH13TI Dual 650V power Schottky silicon carbide diode

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior i.

Features

 No or negligible reverse recovery
 Switching behavior independent of temperature
 Suited for specific bridge-less topologies
 High forward surge capability
 Insulated package:
  – Capacitance: 7 pF
  – Insulated voltage: 2500 V rms Datasheet - production data Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The mi.