STPSC8H065DLF - STMicroelectronics

STPSC8H065DLF 650V power Schottky silicon carbide diode

This 8 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-.

Features

• Less than 1 mm height package
• High creepage package
• No or negligible reverse recovery
• Temperature independent switching behavior
• High forward surge capability
• Low drop forward voltage
• Power efficient product
• ECOPACK2 compliant component Applications
• Switch mode power supply
• Boost PFC
• Bootstrap diode
• LLC clamping function
• High frequency inverter applications Description This 8 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode struc.