STPSC8H065 - STMicroelectronics

STPSC8H065 650V 8A high surge silicon carbide power Schottky diode

This 8 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-of.

Features

• No reverse recovery charge in application current range
• Switching behavior independent of temperature
• High forward surge capability
• Insulated package TO-220AC Ins:
  – Insulated voltage: 2500 VRMS
  – Typical package capacitance: 7 pF
• Power efficient product
• ECOPACK®2 compliant component Applications
• Switch mode power supply
• PFC
• DCDC converters
• LLC topologies
• Boost diode Product status STPSC8H065 Product summary Symbol Value IF(AV) 8A VRRM 650 V Tj(max.) 175 °C Product label Description This 8 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It.