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STPSC8TH13TI |
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| Part Number | STPSC8TH13TI |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a ... |
| Features |
No or negligible reverse recovery Switching behavior independent of temperature Suited for specific bridge-less topologies High forward surge capability Insulated package: – Capacitance: 7 pF – Insulated voltage: 2500 V rms Datasheet - production data Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The mi... |
| Document |
 STPSC8TH13TI Data Sheet
PDF 170.55KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STPSC806 |
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| 2 | STPSC806D |
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| 3 | STPSC8H065 |
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| 4 | STPSC8H065-Y |
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| 5 | STPSC8H065DLF |
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