STPSC8H065-Y - STMicroelectronics

STPSC8H065-Y Automotive 650V 8A high surge silicon carbide power Schottky diode

The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-.

Features

• AEC-Q101 qualified
• No reverse recovery charge in application current range
• Switching behavior independent of temperature
• Recommended to PFC applications
• PPAP capable
• VRRM guaranteed from -40 to 175 °C
• D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (with top coating)
• ECOPACK®2 compliant component Applications
• On board charger Description The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Sch.