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STPSC8H065-Y |
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| Part Number | STPSC8H065-Y |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a... |
| Features |
• AEC-Q101 qualified • No reverse recovery charge in application current range • Switching behavior independent of temperature • Recommended to PFC applications • PPAP capable • VRRM guaranteed from -40 to 175 °C • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (with top coating) • ECOPACK®2 compliant component Applications • On board charger Description The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Sch... |
| Document |
 STPSC8H065-Y Data Sheet
PDF 401.81KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STPSC8H065 |
STMicroelectronics |
650V 8A high surge silicon carbide power Schottky diode |
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| 2 | STPSC8H065DLF |
STMicroelectronics |
650V power Schottky silicon carbide diode |
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| 3 | STPSC806 |
ST Microelectronics |
Schottky Barrier 600 V power Schottky silicon carbide diode |
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| 4 | STPSC806D |
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600 V power Schottky silicon carbide diode |
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| 5 | STPSC8TH13TI |
STMicroelectronics |
Dual 650V power Schottky silicon carbide diode |
|