This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-A.
j Drain-source Voltage (V GS = 0) Drain-gate Voltage (RG S = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
o o
Value STP8NA50FI 500 500 ± 30 8 5.3 32 125 1 -65 to 150 150 4.5 3 32 45 0.36 2000
Unit
V V V A A A W W/o C V
o o
C C
(
•) Pulse width limited by safe operating area
November 1996
1/10
STP8NA50/FI
THERMAL DATA
TO-220 R thj-cas e Rthj- amb Rt hc- sin k Tl.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP8NA50FI |
ST Microelectronics |
N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
2 | STP8N120K5 |
STMicroelectronics |
N-channel Power MOSFET | |
3 | STP8N65M5 |
ST Microelectronics |
Power MOSFETs | |
4 | STP8N65M5 |
INCHANGE |
N-Channel MOSFET | |
5 | STP8N80K5 |
STMicroelectronics |
N-channel Power MOSFET | |
6 | STP8N90K5 |
STMicroelectronics |
N-channel Power MOSFET | |
7 | STP8NC50 |
ST Microelectronics |
N - CHANNEL POWER MOSFET | |
8 | STP8NC50-1 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
9 | STP8NC50FP |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
10 | STP8NC60 |
ST Microelectronics |
N - CHANNEL POWER MOSFET | |
11 | STP8NC60FP |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
12 | STP8NC70Z |
ST Microelectronics |
N - CHANNEL POWER MOSFET |