STP8NC60FP - ST Microelectronics

STP8NC60FP N-CHANNEL POWER MOSFET

The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERT.

Features

nt (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
  –65 to 150 150 (1)ISD ≤7A, di/dt ≤100A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX. Value STP8NC60 600 600 ±30 7 4.4 28 125 1.0 3.5 2500 7 (
*) 4.4 (
*) 28 (
*) 30 0.24 STP8NC60FP Unit V V V A A A W W/°C V/ns V °C °C (
•)Pulse width limited by safe operating area (
*) Limited only by maximum temperature allowed July 2001 1/9 STP8NC60/STP8NC60FP TH.