STP8NA50 ST Microelectronics N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR Datasheet, en stock, prix

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STP8NA50

ST Microelectronics
STP8NA50
STP8NA50 STP8NA50
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Part Number STP8NA50
Manufacturer STMicroelectronics (https://www.st.com/)
Description This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and g...
Features j Drain-source Voltage (V GS = 0) Drain-gate Voltage (RG S = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Value STP8NA50FI 500 500 ± 30 8 5.3 32 125 1  -65 to 150 150 4.5 3 32 45 0.36 2000 Unit V V V A A A W W/o C V o o C C (
•) Pulse width limited by safe operating area November 1996 1/10 STP8NA50/FI THERMAL DATA TO-220 R thj-cas e Rthj- amb Rt hc- sin k Tl...

Document Datasheet STP8NA50 Data Sheet
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