The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERT.
= 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
–65 to 150 150
(1)ISD ≤8A, di/dt ≤100A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX.
Value STP(B)8NC50(-1) STP8NC50FP 500 500 ±30 8 5.4 32 135 1.075 3 2000 8(
*) 5.4(
*) 32(
*) 40 0.32
Unit V V V A A A W W/°C V/ns V °C °C
(
•)Pulse width limited by safe operating area (
*) Limited only by maximum temperature a.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP8NC50 |
ST Microelectronics |
N - CHANNEL POWER MOSFET | |
2 | STP8NC50-1 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
3 | STP8NC60 |
ST Microelectronics |
N - CHANNEL POWER MOSFET | |
4 | STP8NC60FP |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
5 | STP8NC70Z |
ST Microelectronics |
N - CHANNEL POWER MOSFET | |
6 | STP8NC70ZFP |
STMicroelectronics |
N-CHANNEL MOSFET | |
7 | STP8N120K5 |
STMicroelectronics |
N-channel Power MOSFET | |
8 | STP8N65M5 |
ST Microelectronics |
Power MOSFETs | |
9 | STP8N65M5 |
INCHANGE |
N-Channel MOSFET | |
10 | STP8N80K5 |
STMicroelectronics |
N-channel Power MOSFET | |
11 | STP8N90K5 |
STMicroelectronics |
N-channel Power MOSFET | |
12 | STP8NA50 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |