STP8N65M5 - ST Microelectronics

STP8N65M5 Power MOSFETs

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applicati.

Features

Type STB8N65M5 STD8N65M5 STF8N65M5 STI8N65M5 STP8N65M5 STU8N65M5 VDSS @ RDS(on) TJmax max. ID 710 V < 0.6 Ω 7 A PTOT 70 W 70 W 25 W 70 W 70 W 70 W
■ Worldwide best RDS(on)
* area
■ Higher VDSS rating
■ High dv/dt capability
■ Excellent switching performance
■ Easy to drive
■ 100% avalanche tested Applications
■ Switching applications 3 2 1 TO-220FP TAB 3 1 DPAK TAB 3 2 1 TO-220 TAB 123 I²PAK TAB 3 1 D²PAK TAB IPAK 3 2 1 Figure 1. Internal schematic diagram $4!" Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical proc.