STP8N65M5 |
Part Number | STP8N65M5 |
Manufacturer | INCHANGE |
Description | Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP8N65M5 ·FEATURES ·Higher VDSS rating ·Excellent switching performance ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations f... |
Features |
·Higher VDSS rating ·Excellent switching performance ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±25 7.0 4.4 28 PD Total Dissipation 70 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER ... |
Document |
STP8N65M5 Data Sheet
PDF 186.16KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | STP8N65M5 |
ST Microelectronics |
Power MOSFETs | |
2 | STP8N120K5 |
STMicroelectronics |
N-channel Power MOSFET | |
3 | STP8N80K5 |
STMicroelectronics |
N-channel Power MOSFET | |
4 | STP8N90K5 |
STMicroelectronics |
N-channel Power MOSFET | |
5 | STP8NA50 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |