STP85NF55L - ST Microelectronics

STP85NF55L N-CHANNEL POWER MOSFET

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s SOLENOID AND RELAY DRIVE.

Features

MUM RATINGS Symbol VDS VDGR VGS ID(
•) ID IDM (
•
•) Ptot dv/dt (1) EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 55 55 ± 15 80 80 320 300 2.0 10 980 -55 to 175 Unit V V V A A A W W/°C V/ns mJ °C (
•) Current Limited by Package. (
•
•) Pulse width limited by safe.