STP80NF55L-06 - ST Microelectronics

STP80NF55L-06 N-CHANNEL POWER MOSFET

This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPE.

Features

100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature o Value 55 55 ± 20 80 57 320 210 1.4 1 -65 to 175 175 ( 1) starting Tj = 25 oC, ID =40A , VDD = 30V Unit V V V A A A W W /o C J o o C C (
•) Pulse width limited by safe operating area October 1999 1/8 STP80NF55L-06 THERMAL DATA R thj -case R thj -amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature F or Soldering Purpose 0.71 62.5 300 o o C/W C/W o C ELECTRICAL CHARAC.