This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s SOLENOID AND RELAY DRIVE.
at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 55 55 ± 20 80 57 320 300 2 870 -55 to 175
(1) Starting Tj = 25 oC, ID = 40A, VDD = 30V
Unit V V V A A A W W/°C mJ °C
(
•) Current limited by package (
•
•) Pulse width limited by safe operating area. March 2002
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STB80NF55-08/-1 STP80NF55-08
THERMAL DATA
Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Sold.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP80NF55-06 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
2 | STP80NF55-06 |
INCHANGE |
N-Channel MOSFET | |
3 | STP80NF55-06FP |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
4 | STP80NF55-08AG |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
5 | STP80NF55L-06 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
6 | STP80NF55L-08 |
ST Microelectronics |
N - CHANNEL POWER MOSFET | |
7 | STP80NF03L-04 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
8 | STP80NF06 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
9 | STP80NF10 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
10 | STP80NF10FP |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
11 | STP80NF12 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
12 | STP80NF12FP |
ST Microelectronics |
N - CHANNEL POWER MOSFET |