STP80NF12FP - ST Microelectronics

STP80NF12FP N - CHANNEL POWER MOSFET

This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate .

Features

PPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID(
*) ID IDM(
•) Ptot dv/dt (1) EAS (2) VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Insulation Withstand Voltage (DC) Storage Temperature Operating Junction Temperature Value STB_P_W80NF12 STP80NF12FP 120 1.