STP80NF55-06 - ST Microelectronics

STP80NF55-06 N-CHANNEL POWER MOSFET

This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s SOLENOID AND RELAY DRI.

Features

ltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 o C Derating Factor Insulation W ithstand Voltage (DC) Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o Unit STP55NF 55-06FP 55 55 ± 20 V V V 60 42 240 50 0.33 2000 7 A A A W W/ oC V V/ns o o 80 57 320 210 1.43  -65 to 175 175 C C 1/6 (
•) Pulse width limited by safe operating area ( 1) ISD ≤ 80 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJ.