STP80NF06 - ST Microelectronics

STP80NF06 N-CHANNEL POWER MOSFET

This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. D2PAK INTERNAL SCHEMATIC DIAGRAM A.

Features

APE & REEL TUBE TUBE March 2004 1/10 STP80NF06 - STB80NF06 - STW80NF06 ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID (
*) ID IDM ( ) PTOT EAS (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 60 60 ±20 80 80 320 300 2 870
  –65 to 175 175 Unit V V V A A A W W/°C mJ °C °C (q ) Pulse width limited .