STP6625 P Channel Enhancement Mode MOSFET -5.0A SCRIPTION STP6625 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, noteoo.
-Source Voltage Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature VGSS ID IDM IS PD TJ Storgae Temperature Range TSTG Thermal Resistance-Junction to Ambient RθJA Typical -60 ±20 -5.0 -4.0 -25 -3 2.3 1.3 -55/150 -55/150 70 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com . STP6625 2010. V1 STP6625 P Channel Enhancement Mode MOSFET -5.0A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP6621 |
Stanson Technology |
MOSFET | |
2 | STP6623 |
Stanson Technology |
MOSFET | |
3 | STP6635GH |
Stanson Technology |
MOSFET | |
4 | STP601 |
Stanson Technology |
MOSFET | |
5 | STP601D |
Stanson Technology |
MOSFET | |
6 | STP605D |
STANSON |
P-Channel Enhancement Mode MOSFET | |
7 | STP607D |
Stanson Technology |
MOSFET | |
8 | STP60L60 |
SamHop |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
9 | STP60L60A |
SamHop |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
10 | STP60L60F |
SamHop |
N-Channel Enhancement Mode Field Effect Transistor | |
11 | STP60N043DM9 |
STMicroelectronics |
N-CHANNEL Power MOSFET | |
12 | STP60N05-14 |
ST Microelectronics |
N-CHANNEL Power MOSFET |