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STP6625 |
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| Part Number | STP6625 |
| Manufacturer | Stanson Technology |
| Description | STP6625 P Channel Enhancement Mode MOSFET -5.0A SCRIPTION STP6625 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technol... |
| Features |
-Source Voltage
Continuous Drain Current (TJ=150℃)
TA=25℃ TA=70℃
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃ TA=70℃
Operation Junction Temperature
VGSS ID IDM IS PD TJ
Storgae Temperature Range
TSTG
Thermal Resistance-Junction to Ambient
RθJA
Typical
-60
±20 -5.0 -4.0 -25
-3 2.3 1.3 -55/150
-55/150
70
Unit V V A A A W ℃ ℃ ℃/W
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
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STP6625 2010. V1
STP6625
P Channel Enhancement Mode MOSFET
-5.0A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise... |
| Document |
 STP6625 Data Sheet
PDF 806.66KB |
| Distributor | Stock | Price | Buy |
|---|
