This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-A.
V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain-gate Voltage (RG S = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 oC Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) 800 800 ± 30 4 2.5 16
o
Value STP4NA80FI
Unit
V V V 2.5 1.6 16 45 0.36 2000 A A A W W/o C V
o o
w
w
w
a D .
(
•) Pulse width limited by safe operating area
S a t
t e he
Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
4U
.c
om
110 0.88 -65 to 150 150
C C
February 1994
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www.Dat.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP4NA80FI |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
2 | STP4NA40 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
3 | STP4NA40F1 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
4 | STP4NA40FI |
ST Microelectronics |
N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
5 | STP4NA60 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
6 | STP4NA60FI |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
7 | STP4NA60FP |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
8 | STP4N150 |
STMicroelectronics |
N-Channel MOSFET | |
9 | STP4N20 |
STMicroelectronics |
N-channel Power MOSFET | |
10 | STP4N40 |
ST Microelectronics |
N-Channel MOSFET | |
11 | STP4N40FI |
STMicroelectronics |
N-Channel Enhancement Mode Power MOS Transistor | |
12 | STP4N52K3 |
STMicroelectronics |
N-channel Power MOSFET |