STP4NA60 - ST Microelectronics

STP4NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-A.

Features

Tj Drain-source Voltage (V GS = 0) Drain-gate Voltage (RG S = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Value STP4NA60FI 600 600 ± 30 4.3 2.8 17.2 100 0.8  -65 to 150 150 2.7 1.8 17.2 40 0.32 2000 Unit V V V A A A W W/o C V o o C C (
•) Pulse width limited by safe operating area November 1996 1/10 STP4NA60/FI THERMAL DATA TO-220 R thj-cas e Rthj- amb Rt .