STP4NA40FI - ST Microelectronics

STP4NA40FI N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s D.

Features

(continuous) at T c = 25 oC ID Drain Current (continuous) at T c = 100 oC IDM(
•) Drain Current (pulsed) Ptot Total Dissipation at Tc = 25 oC Derating Factor VISO Insulation Withstand Voltage (DC) Tstg Storage Temperature Tj Max. Operating Junction Temperature (
•) Pulse width limited by safe operating area November 1996 3 2 1 TO-220 3 2 1 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM Val ue STP4NA40 STP4NA40FI 400 400 ± 30 4 2.8 2.5 1.7 16 16 80 40 0. 64 0. 32  2000 -65 to 150 150 Unit V V V A A A W W/oC V oC oC 1/10 STP4NA40/FI THERMAL DATA Rthj-case Rthj- amb Rt hc- sin k Tl .