® STP4N20 N - CHANNEL 200V - 1.3 Ω - 4A TO-220 POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP4N20 200 V < 1.5 Ω 4A s TYPICAL RDS(on) = 1.3 Ω s AVALANCHE RUGGED TECHNOLOGY ) s 100% AVALANCHE TESTED t(s s LOW GATE CHARGE s HIGH CURRENT CAPABILITY c s 150 oC OPERATING TEMPERATURE du s APPLICATION ORIENTED ro CHARACTERIZATION P APPLICATIONS te s HIGH C.
e Temperature
Tj Max. Operating Junction Temperature
(
•) Pulse width limited by safe operating area
-65 to 150
oC
150
oC
February 1999
1/8
STP4N20
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
2.08 62.5 0.5 300
oC/W
oC/W oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR Avalanche Current, Repetitive or Not-Repetitive
4
A
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
) (star.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP4N150 |
STMicroelectronics |
N-Channel MOSFET | |
2 | STP4N40 |
ST Microelectronics |
N-Channel MOSFET | |
3 | STP4N40FI |
STMicroelectronics |
N-Channel Enhancement Mode Power MOS Transistor | |
4 | STP4N52K3 |
STMicroelectronics |
N-channel Power MOSFET | |
5 | STP4N62K3 |
ST Microelectronics |
SuperMESH3 Power MOSFET | |
6 | STP4N80K5 |
STMicroelectronics |
N-CHANNEL MOSFET | |
7 | STP4N90K5 |
STMicroelectronics |
N-channel Power MOSFET | |
8 | STP4NA40 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
9 | STP4NA40F1 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
10 | STP4NA40FI |
ST Microelectronics |
N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
11 | STP4NA60 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
12 | STP4NA60FI |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |