This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-A.
source Voltage (V GS = 0) Drain-gate Voltage (RG S = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
o o
Value STP4NA40FI 400 400 ± 30 4 2.5 16 80 0.64 -65 to 150 150 2.8 1.7 16 40 0.32 2000
Unit
V V V A A A W W/o C V
o o
C C
(
•) Pulse width limited by safe operating area
November 1996
1/10
STP4NA40/FI
THERMAL DATA
TO-220 R thj-cas e Rthj- amb Rt hc- sin k Tl The.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP4NA40F1 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
2 | STP4NA40FI |
ST Microelectronics |
N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
3 | STP4NA60 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
4 | STP4NA60FI |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
5 | STP4NA60FP |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
6 | STP4NA80 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
7 | STP4NA80FI |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
8 | STP4N150 |
STMicroelectronics |
N-Channel MOSFET | |
9 | STP4N20 |
STMicroelectronics |
N-channel Power MOSFET | |
10 | STP4N40 |
ST Microelectronics |
N-Channel MOSFET | |
11 | STP4N40FI |
STMicroelectronics |
N-Channel Enhancement Mode Power MOS Transistor | |
12 | STP4N52K3 |
STMicroelectronics |
N-channel Power MOSFET |