This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge driv.
source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 100 100 ±20 40 28 160 115 0.77 13 300
– 55 to 175
(1) ISD ≤35A, di/dt ≤ 300A/µs, VDD ≤ V(BR)DSS, Tj ≤ T JMAX. (2) Starting Tj = 25°C, ID = 20A, VDD = 80V
Unit V V V A A A W W/°C V/ns mJ °C
(q ) Pulse width limited by safe operating area
April 2003
1/10
STP35NF10 - STB35NF10
THERMAL DATA
Rthj-case Rthj-amb T.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP35N10 |
SamHop |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
2 | STP35N60DM2 |
STMicroelectronics |
N-channel Power MOSFET | |
3 | STP35N65M5 |
STMicroelectronics |
N-channel Power MOSFET | |
4 | STP35N65M5 |
INCHANGE |
N-Channel MOSFET | |
5 | STP300NH02L |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
6 | STP3010 |
SUN MICROELECTRONICS |
Graphics Accelerator | |
7 | STP3015L |
ST Microelectronics |
N - CHANNEL POWER MOSFET | |
8 | STP3020L |
ST Microelectronics |
N - CHANNEL POWER MOSFET | |
9 | STP3052D |
Stanson Technology |
MOSFET | |
10 | STP3055L2 |
SamHop |
MOSFET | |
11 | STP30N05 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
12 | STP30N05FI |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |