STP30N05 STP30N05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP30N05 STP30N05FI s s s s s s s s V DSS 50 V 50 V R DS( on) < 0.05 Ω < 0.05 Ω ID 30 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATI.
l Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
o o
Value STP30N05FI 50 50 ± 20 30 21 120 105 0.7 -65 to 175 175 19 13 120 40 0.27 2000
Unit
V V V A A A W W/o C V
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C C
(
•) Pulse width limited by safe operating area
December 1996
1/10
STP30N05/FI
THERMAL DATA
TO-220 R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Max 1.43 62.5 0.5 300 ISOWATT220 3.75
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C/W C/W C/W o C
Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For S.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP30N05FI |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
2 | STP30N06 |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
3 | STP30N06FI |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
4 | STP30N10F7 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
5 | STP30N10F7 |
INCHANGE |
N-Channel MOSFET | |
6 | STP30N65DM6AG |
STMicroelectronics |
Automotive-grade N-channel Power MOSFET | |
7 | STP30N65M5 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
8 | STP30N65M5 |
INCHANGE |
N-Channel MOSFET | |
9 | STP30NE03L |
ST Microelectronics |
N - CHANNEL POWER MOSFET | |
10 | STP30NE03LFP |
ST Microelectronics |
N - CHANNEL POWER MOSFET | |
11 | STP30NE06 |
ST Microelectronics |
N - CHANNEL POWER MOSFET | |
12 | STP30NE06FP |
STMicroelectronics |
N-CHANNEL Power MOSFET |