STP35NF10 |
Part Number | STP35NF10 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary swit... |
Features |
source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 100 100 ±20 40 28 160 115 0.77 13 300 – 55 to 175 (1) ISD ≤35A, di/dt ≤ 300A/µs, VDD ≤ V(BR)DSS, Tj ≤ T JMAX. (2) Starting Tj = 25°C, ID = 20A, VDD = 80V Unit V V V A A A W W/°C V/ns mJ °C (q ) Pulse width limited by safe operating area April 2003 1/10 STP35NF10 - STB35NF10 THERMAL DATA Rthj-case Rthj-amb T... |
Document |
STP35NF10 Data Sheet
PDF 390.14KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP35N10 |
SamHop |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
2 | STP35N60DM2 |
STMicroelectronics |
N-channel Power MOSFET | |
3 | STP35N65M5 |
STMicroelectronics |
N-channel Power MOSFET | |
4 | STP35N65M5 |
INCHANGE |
N-Channel MOSFET | |
5 | STP300NH02L |
ST Microelectronics |
N-CHANNEL Power MOSFET |