STP35N60DM2 - STMicroelectronics

STP35N60DM2 N-channel Power MOSFET

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Order code STP35N60DM2 Table 1: Device summ.

Features

Order code VDS STP35N60DM2 600 V RDS(on) max. 0.110 Ω ID PTOT 28 A 210 W
 Fast-recovery body diode
 Extremely low gate charge and input capacitance
 Low on-resistance
 100% avalanche tested
 Extremely high dv/dt ruggedness
 Zener-protected Applications
 Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-s.