' These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for ap.
Type
STB35N65M5 STF35N65M5 STI35N65M5 STP35N65M5 STW35N65M5
VDSS @ TJMAX
710 V 710 V 710 V 710 V 710 V
RDS(on) max. ID
< 0.098 Ω < 0.098 Ω < 0.098 Ω < 0.098 Ω < 0.098 Ω
27 A 27 A(1) 27 A 27 A 27 A
1. Limited only by maximum temperature allowed
■ Worldwide best RDS(on)
* area
■ Higher VDSS rating
■ Excellent switching performance
■ Easy to drive
■ 100% avalanche tested
■ High dv/dt capability
Applications
3 1
D²PAK
3 2 1
TO-220FP
123
I²PAK
3 2 1
TO-220
3 2 1
TO-247
Figure 1. Internal schematic diagram
$
■ Switching applications
Description
'
These devices are N-channel MD.
isc N-Channel MOSFET Transistor STP35N65M5 ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resi.
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