STP35N65M5 |
Part Number | STP35N65M5 |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor STP35N65M5 ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum L... |
Features |
·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGSS Gate-Source Voltage ±25 V ID Drain Current-Continuous@TC=25℃ 27 TC=100℃ 17 A IDM Drain Current-Single Pulsed 108 A PD Total Dissipation 160 W Tj Operating Junction Temperature 150 ℃ Tstg Storage T... |
Document |
STP35N65M5 Data Sheet
PDF 252.68KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
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1 | STP35N65M5 |
STMicroelectronics |
N-channel Power MOSFET | |
2 | STP35N60DM2 |
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5 | STP300NH02L |
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