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STP35N60DM2 |
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| Part Number | STP35N60DM2 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable... |
| Features |
Order code
VDS
STP35N60DM2 600 V
RDS(on) max.
0.110 Ω
ID PTOT 28 A 210 W
Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Applications Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-s... |
| Document |
 STP35N60DM2 Data Sheet
PDF 594.06KB |
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