STP25N10F7 - STMicroelectronics

STP25N10F7 N-CHANNEL POWER MOSFET

th These devices utilize the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 6 $0Y Order codes STD25N10F7 STF25N10F7 STP25N10F7 Table 1. Device summary Marking Package 25N10F7 25N10F7 25N10F7 DPAK TO-220FP TO-220 Septemb.

Features

Order codes STD25N10F7 STF25N10F7 STP25N10F7 VDSS 100 V 100 V 100 V RDS(on) max.(1) 0.035 Ω 0.035 Ω 0.035 Ω ID 25 A 19 A 25 A PTOT 40 W 25 W 50 W 1. @ VGS = 10 V
• Ultra low on-resistance
• 100% avalanche tested Applications
• Switching applications 'Ć7$%
* Description th These devices utilize the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 6 $0Y Order codes STD25N10F7 STF25N10F7 STP25N10F7 Table 1. Device summary Marking Package 25N10F7 .