STP25N06 - ST Microelectronics

STP25N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

www.DataSheet4U.com STP25N06 STP25N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP25N06 STP25N06FI s s s s s s s s V DSS 60 V 60 V R DS( on) < 0.065 Ω < 0.065 Ω ID 25 A 16 A TYPICAL RDS(on) = 0.048 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATIN.

Features

Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Value STP25N06FI 60 60 ± 20 25 17 100 90 0.6  -65 to 175 175 16 11 100 40 0.27 2000 Unit V V V A A A W W/o C V o o C C (
•) Pulse width limited by safe operating area December 1996 1/10 DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com STP25N06/FI THERMAL DATA TO-220 R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Max 1.57 62.5 0.5 300 ISOWATT220 3.75 o o o C/W C/W C/W o C The.