Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding .
Order code
VDS at TJ max.
RDS(on) max.
STP25N60M2-EP
650 V
0.188 Ω
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• Very low turn-off switching losses
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
• Tailored for Very high frequency converters (f > 150 kHz)
ID 18 A
S(3)
AM01475V1
Product status link
STP25N60M2-EP
Product summary
Order code
STP25N60M2-EP
Marking
25N60M2EP
Package
TO-220
Packing
Tube
Description
This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technolog.
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