STP25N80K5 - STMicroelectronics

STP25N80K5 N-channel Power MOSFET

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Order code STB25N80K5 STF25N80K5 STP25N80K5 STW25N80K5 Table 1. D.

Features

Order code VDS @ TJmax RDS(on) max ID PTOT STB25N80K5 250 W STF25N80K5 STP25N80K5 STW25N80K5 800 V < 0.260 Ω 19.5 A 40 W 250 W
• Industry’s lowest RDS(on) x area
• Industry’s best figure of merit (FoM
• Ultra low gate charge
• 100% avalanche tested
• Zener-protected Applications
• Switching applications
* 6 AM01476v1 Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requirin.