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STP25N10F7 |
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| Part Number | STP25N10F7 |
| Manufacturer | INCHANGE |
| Description | ·These devices utilize the 7th generation of design rules of ST Proprietary,with a new gate structure. ·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta... |
| Features |
·Drain Current –ID= 25A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.035Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·These devices utilize the 7th generation of design rules of ST Proprietary,with a new gate structure. ·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single P... |
| Document |
 STP25N10F7 Data Sheet
PDF 233.34KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STP25N10F7 |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|
| 2 | STP25N06 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
|
| 3 | STP25N06FI |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
|
| 4 | STP25N60M2-EP |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|
| 5 | STP25N80K5 |
STMicroelectronics |
N-channel Power MOSFET |
|